AIB

                                                                        AIB

              AIB Automotive is a French fleet managing and operational car leasing company and a fully owned subsidiary of Société Générale.^[1]The company is active internationally and manages around 1.4 million vehicles.^[2] With a direct presence in 41 countries and with top 3 positions in 26 countries, ALB Automotive is ranked  worldwide and in Europe by number of contracts under management and excluding OEM captives as at 31 December 2016 with around 1.4 million full service vehicle leasing and fleet management service contracts.The company also sells former lease fleet vehicles to consumers through its ALB carmarket brand.

              In 2015 ALD Automotive started leasing out e-bikes in the Netherlands, as part of a program on experimenting with innovative mobility on the Dutch market.Atomic layer deposition (ALD) is a thin film deposition method in which a film is grown on a substrate by exposing its surface to alternate gaseous species (typically referred to as precursors). In contrast to chemical vapor deposition, the precursors are never present simultaneously in the reactor, but they are inserted as a series of sequential, non-overlapping pulses. In each of these pulses the precursor molecules react with the surface in a self-limiting way, so that the reaction terminates once all the reactive sites on the surface are consumed. Consequently, the maximum amount of material deposited on the surface after a single exposure to all of the precursors (a so-called ALD cycle) is determined by the nature of the precursor-surface interaction. By varying the number of cycles it is possible to grow materials uniformly and with high precision on arbitrarily complex and large substrates.

         A basic schematic of the Atomic Layer Deposition (ALD) process. In Frame A, precursor 1 (in blue) is added to the reaction chamber containing the material surface to be coated by ALDAfter precursor 1 has adsorbed on the surface, any excess is removed from the reaction chamber. Precursor 2 (red) is added (Frame B) and reacts with precursor 1 to create another layer on the surface (Frame C). Precursor 2 is then cleared from the reaction chamber and this process is repeated until a desired thickness is achieved and the resulting product resembles form d.

                ALD is considered one deposition method with great potential for producing very thin,   conformal films with control of the thickness and composition of the films possible at the atomic level. A major driving force for the recent interest is the prospective seen for ALD in scaling down microelectronic devices according to Moore's law. ALD is an active field of research, with hundreds of different processes published in the scientific literature, though some of them exhibit behaviors that depart from that of an ideal ALD process.

ALD has been developed in two independent discoveries under names atomic layer epitaxy (ALE, Finland) and molecular layering (ML, Soviet Union). To clarify the early history, an open effort called the Virtual Project on the History of ALD (VPHA) has been set up in summer 2013 by a group of scientists. Dedicated essays have resulted, which describe the historical development of ALD under the names ALEand ML as well as a review article that presents a short recommended reading list of early ALD publications.